DocumentCode
3556605
Title
The effects of write/erase cycling on data loss in EEPROMs
Author
Baglee, David A. ; Smayling, Michael C.
Author_Institution
Texas Instruments, Houston, Texas
Volume
31
fYear
1985
fDate
1985
Firstpage
624
Lastpage
626
Abstract
Increasing leakage at low electric fields is observed in thin silicon dioxide films after they have been subjected to write/erase cycling. This mechanism anneals out after high temperature baking. Conventional lifetesting techniques for EEPROMs may result in overly optimistic estimations of data retention.
Keywords
Annealing; Capacitance-voltage characteristics; Capacitors; EPROM; Interface states; Life estimation; Nonvolatile memory; Plasma temperature; Silicon compounds; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191050
Filename
1485600
Link To Document