A novel self-aligned AlGaAs laser with bent active layer grown by MOCVD

A novel self-aligned AlGaAs laser with bent active layer (SBA laser) grown by two-step MOCVD has been developed. The SBA laser has an inner current confinement stipe and the transverse mode is stabilized by a large effective refractive index step in the lateral direction provided by the steep bends of the active layer. As a result, low threshold current (28 mA) with high differential quantum efficiency (28%/facet), high characteristic temperature (210 K) and small astigmatism within a few microns have been achieved. The laser has also a long life.