High performance AlGaAs visible (700 nm) LED on Si substrate prepared by MOCVD

Visible light emitting AlGaAs diodes (LED´s) on silicon substrates have been developed successfully by metalorganic chemical vapor deposition (MOCVD) technique. The LED´s show good I-V characteristics, and the emission spectrum was peaking at 700 nm with the half-width of 45 nm at the forward current of 100 mA at room temperature: The external efficiency was 0.3%.