DocumentCode
3556615
Title
High performance AlGaAs visible (700 nm) LED on Si substrate prepared by MOCVD
Author
Hashimoto, Akihiro ; Kawarada, Yoshihiro ; Kamijoh, Takeshi ; Akiyama, Masahiro ; Watanabe, Nozomu ; Sakuta, Masaaki
Author_Institution
OKI Electric Industry Co., Ltd., Tokyo, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
658
Lastpage
661
Abstract
Visible light emitting AlGaAs diodes (LED´s) on silicon substrates have been developed successfully by metalorganic chemical vapor deposition (MOCVD) technique. The LED´s show good I-V characteristics, and the emission spectrum was peaking at 700 nm with the half-width of 45 nm at the forward current of 100 mA at room temperature: The external efficiency was 0.3%.
Keywords
Chemical vapor deposition; Crystallization; Driver circuits; Epitaxial layers; Gallium arsenide; Light emitting diodes; MOCVD; Monolithic integrated circuits; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191060
Filename
1485610
Link To Document