Title :
Cell structures for future DRAM´s
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Abstract :
The trends in MOS dynamic random-access memories (dRAM´s) are reviewed with emphasis on the memory cell structures. A projected trend in the scalability of future dRAM´s is discussed based on the review presented here. Finally, some candidates which are assumed to be suitable for memory cells of future dRAM´s are proposed.
Keywords :
Capacitors; Conductors; Dielectric breakdown; Dielectrics and electrical insulation; Laboratories; Marketing and sales; Scalability; Stability; Technological innovation; Voltage;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191070