DocumentCode :
3556630
Title :
A trench transistor cross-point DRAM cell
Author :
Richardson, W.F. ; Bordelon, D.M. ; Pollack, G.P. ; Shah, A.H. ; Malhi, S.D.S. ; Shichijo, H. ; Banerjee, S.K. ; Elahy, M. ; Womack, R.H. ; Wang, C.P. ; Gallia, J. ; Davis, H.E. ; Chatterjee, P.K.
Author_Institution :
Texas Instruments Inc., Dallas, Texas
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
714
Lastpage :
717
Abstract :
A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.
Keywords :
Boron; Capacitance; Capacitors; Epitaxial layers; Etching; Fabrication; Instruments; Process design; Random access memory; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191075
Filename :
1485625
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556630
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