DocumentCode
3556633
Title
Approaches to isolation in high voltage integrated circuits
Author
Becke, H.W.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
31
fYear
1985
fDate
1985
Firstpage
724
Lastpage
727
Abstract
This paper reviews high voltage integrated circuits, their isolation methods, and device features. Conventional Junction Isolation can be used for voltage requirements >200 volts if special upward-downward diffusions are employed or if the RESURF principle is applied. Self Isolation is limited to common source arrays. Dielectric Isolation is most versatile and area efficient. MOS-Bipolar combination devices, complementary designs, and on-chip logic are the trends in HVIC´s.
Keywords
Conductivity; Dielectric substrates; Displays; Electric breakdown; Logic circuits; Logic design; Logic devices; Pulse inverters; Switches; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191078
Filename
1485628
Link To Document