DocumentCode :
3556633
Title :
Approaches to isolation in high voltage integrated circuits
Author :
Becke, H.W.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
724
Lastpage :
727
Abstract :
This paper reviews high voltage integrated circuits, their isolation methods, and device features. Conventional Junction Isolation can be used for voltage requirements >200 volts if special upward-downward diffusions are employed or if the RESURF principle is applied. Self Isolation is limited to common source arrays. Dielectric Isolation is most versatile and area efficient. MOS-Bipolar combination devices, complementary designs, and on-chip logic are the trends in HVIC´s.
Keywords :
Conductivity; Dielectric substrates; Displays; Electric breakdown; Logic circuits; Logic design; Logic devices; Pulse inverters; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191078
Filename :
1485628
Link To Document :
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