350V analog-digital compatible power IC technologies

Using a dielectric isolation process, 350V analog-digital compatible power IC technologies were developed. Good complemental electrical characteristics were achieved by vertical npn and new lateral pnp transistors, and the transistor noise was reduced by removing crystal defects specific to dielectrically isolated wafers, furthermore, high accuracy of resistance was achieved by a symmetrical layout. The technologies were applied to the development of a high voltage power IC for communication use.