DocumentCode
3556634
Title
350V analog-digital compatible power IC technologies
Author
Sugawara, Y. ; Miyata, K. ; Okamura, M.
Author_Institution
Hitachi, Ltd., Hitachi, Ibaraki, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
728
Lastpage
731
Abstract
Using a dielectric isolation process, 350V analog-digital compatible power IC technologies were developed. Good complemental electrical characteristics were achieved by vertical npn and new lateral pnp transistors, and the transistor noise was reduced by removing crystal defects specific to dielectrically isolated wafers, furthermore, high accuracy of resistance was achieved by a symmetrical layout. The technologies were applied to the development of a high voltage power IC for communication use.
Keywords
Analog integrated circuits; Analog-digital conversion; Dielectric substrates; Electric resistance; Impurities; Integrated circuit noise; Isolation technology; Noise reduction; Power integrated circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191079
Filename
1485629
Link To Document