DocumentCode
3556637
Title
Analysis of the lateral insulated gate transistor
Author
Simpson, M.R. ; Gough, P.A. ; Hshieh, F.I. ; Rumennik, V.
Author_Institution
North American Philips Corporation, Briarcliff Manor, New York
Volume
31
fYear
1985
fDate
1985
Firstpage
740
Lastpage
743
Abstract
On-state characteristics of the Lateral Insulated Gate Transistor (LIGT) have been investigated and modeled with the aid of two-dimensional simulations. It is shown that the LIGT is characterized by several distinct on-state regimes: DMOS, bipolar, and thyristor-latchup; which are identified by the respective conduction mechanisms for each mode. Furthermore, the geometry of the shorted anode determines the transition from the DMOS regime to the bipolar regime, whereas the geometry of the p-well determines the transition to thyristor behavior. Devices have been fabricated with latchup currents greater than 2 A/cm.
Keywords
Analytical models; Anodes; Current-voltage characteristics; Electrodes; Geometry; Insulation; Solid modeling; Substrates; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191082
Filename
1485632
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