Title :
High performance In0.15Ga0.85As/Al0.15Ga0.85As quantum well modulation doped FETs
Author :
Masselink, W.T. ; Klem, J. ; Henderson, T. ; Ketterson, A. ; Gedymin, J.S. ; Morkoc, H. ; Gleason, K.R.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
Keywords :
Conducting materials; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Lattices; MESFETs; MODFET circuits;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191085
