Title :
Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide
Author :
Horiguchi, S. ; Kobayashi, T. ; Miyake, M. ; Oda, M. ; Kiuchi, K.
Author_Institution :
NTT Atsugi Electrical Communications Laboratories, Kanagawa, Japan
Keywords :
Capacitance; Dry etching; Electrons; Frequency; Impurities; Laboratories; MOS devices; MOSFET circuits; Transconductance; Writing;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191088
