Title :
Monolithic integration of Si MOSFETs and GaAs MESFETs
Author :
Choi, H.K. ; Turner, G.W. ; Tsaur, B-Y.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
Keywords :
Epitaxial growth; Etching; Gallium arsenide; MESFETs; MODFET circuits; MOSFETs; Metallization; Monolithic integrated circuits; Optical device fabrication; Substrates;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191090
