"Submicron bipolar technology - new chances for high speed applications"

The paper demonstrates that bipolar technology is getting new powerful momentum based on: i) improvements in technology synergetically using MOS techniques and ii) new concepts such as self-aligned structures and polysilicon emitters. Exploiting these innovations is shown to drastically reduce parasitics and device dimensions thus considerably extending the domain of bipolar technology towards high speed as well as high complexity circuits. Furthermore the synergetical use of processing knowhow opens up chances to cut down development and production cost and to realize vital BICMOS technologies combining the inherent advantages of CMOS- and BIPOLAR-technologies.