DocumentCode
3556663
Title
Minority carrier transport in silicon
Author
Tang, D.D. ; Fang, F.F. ; Scheuermann, M. ; Chen, T.C. ; Sai-Halasz, G.
Author_Institution
IBM T.J. Watson Research Center, Yorktown Heights, NY
Volume
32
fYear
1986
fDate
1986
Firstpage
20
Lastpage
23
Abstract
Time-of-flight measurements of the minority-carrier electron drift mobility in p-type silicon at room temperature are presented. It was found that the electron mobility at zero field is close to that in n-type silicon of equivalent doping density, however, it decreases rapidly with electric field in a range from 0 - 200 V/cm and more gradually at higher fields. This effect is attributed to electron-hole scattering.
Keywords
Aluminum; Current measurement; Electron mobility; Measurement techniques; Optical pulse generation; Pulse amplifiers; Semiconductor device doping; Silicon; Space vector pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191100
Filename
1486358
Link To Document