Title :
A thermionic-diffusion model of polysilicon emitter
Author :
Ng, Chung C. ; Yang, Edward S.
Author_Institution :
Columbia University, New York, NY
Abstract :
A model has been developed to characterize the hole current through an n-type polysilicon emitter in terms of thermionic emission acting in series with drift-diffusion. The thermionic emission results from the steep potential barrier which is induced by impurity segregation at the polysilicon-silicon interface. The total hole current, according to this model, depends on the peak doping concentration and the Gummel number of the monosilicon region of the emitter.
Keywords :
Bipolar transistors; Impurities; Kinetic energy; Photonic band gap; Reflection; Scattering; Surface cleaning; Temperature dependence; Thermionic emission; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191103
