DocumentCode
3556671
Title
Perfect hillockless metallization (PHM) process for VLSI
Author
Harada, H. ; Harada, S. ; Hirata, Y. ; Noguchi, T. ; Mochizuki, H.
Author_Institution
Mitsubishi Electric Corp., Itami, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
46
Lastpage
49
Abstract
Enhanced growth of chemically converted aluminum oxide is observed by an introduction of sputter etching as surface treatment of aluminum prior to the conversion. The aluminum oxide film suppresses the formation of aluminum hillocks, aluminum voids and cracks in the passivation film which reduce both the yield and reliability of VLSI.
Keywords
Aluminum oxide; Heat treatment; Metallization; Passivation; Prognostics and health management; Silicon; Sputter etching; Stress; Surface treatment; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191107
Filename
1486365
Link To Document