Title :
Perfect hillockless metallization (PHM) process for VLSI
Author :
Harada, H. ; Harada, S. ; Hirata, Y. ; Noguchi, T. ; Mochizuki, H.
Author_Institution :
Mitsubishi Electric Corp., Itami, Japan
Abstract :
Enhanced growth of chemically converted aluminum oxide is observed by an introduction of sputter etching as surface treatment of aluminum prior to the conversion. The aluminum oxide film suppresses the formation of aluminum hillocks, aluminum voids and cracks in the passivation film which reduce both the yield and reliability of VLSI.
Keywords :
Aluminum oxide; Heat treatment; Metallization; Passivation; Prognostics and health management; Silicon; Sputter etching; Stress; Surface treatment; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191107
