• DocumentCode
    3556684
  • Title

    Theory and experiment of heterojunction bipolar transistor at very low temperatures

  • Author

    Ohta, K. ; Furukawa, A. ; Baba, T. ; Ogawa, M.

  • Author_Institution
    NEC Corporation, Kanagawa, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    This paper presents the first observation of 4.2 K operation of HBT and describes the construction of a new theory to interpret it. As a result, possibility of a few mV logic swing circuit is theoretically predicted.
  • Keywords
    Charge carrier processes; Current density; Electron emission; Electron mobility; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Silicon; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191119
  • Filename
    1486377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556684