Title :
Theory and experiment of heterojunction bipolar transistor at very low temperatures
Author :
Ohta, K. ; Furukawa, A. ; Baba, T. ; Ogawa, M.
Author_Institution :
NEC Corporation, Kanagawa, Japan
Abstract :
This paper presents the first observation of 4.2 K operation of HBT and describes the construction of a new theory to interpret it. As a result, possibility of a few mV logic swing circuit is theoretically predicted.
Keywords :
Charge carrier processes; Current density; Electron emission; Electron mobility; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191119
