DocumentCode
3556690
Title
Properties of a high-power field-controlled thyristor
Author
Grüning, H. ; Voboril, J. ; Gobrecht, J. ; Roggwiller, P. ; Abbas, C.C. ; Broich, B.
Author_Institution
BBC Brown Boveri Research Center, Baden, Switzerland
Volume
32
fYear
1986
fDate
1986
Firstpage
110
Lastpage
113
Abstract
Field controlled thyristors (FCTh) have been realized by a recessed gate technique. Static and dynamic characteristics are measured and compared to theoretical results. During turn-off a new latching mechanism is observed which is explained in terms of a comprehensive physical model. New advanced cascode and cascade circuits are proposed with reduced on resistance, very high current gain and fast, snubberless switching.
Keywords
Anodes; Cathodes; Charge carrier lifetime; Circuits; Diodes; Doping; Fingers; Plasma measurements; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191125
Filename
1486383
Link To Document