Effect of temperature and load on MCT turn-off capability

MOS controlled thyristors form a new class of power devices combining the power handling capability and forward drop of thyristors with the ease of gate control (both turn-on and turn-off) enjoyed by other MOS gated devices. This paper reports the first work on device operation to 300°C, believed to be a first in bipolar silicon power devices, as well as turn-off in inductive and resistive circuits, with and without snubbers, and at various turn-off clamp voltages up to 80% of the device´s breakdown voltage.