DocumentCode
3556717
Title
Properties of silicon oxide films grown in a microwave oxygen plasma
Author
Roppel, T. ; Reinhard, D.K. ; Salbert, G.T. ; Asmussen, J.
Author_Institution
Michigan State University, East Lansing, MI
Volume
32
fYear
1986
fDate
1986
Firstpage
205
Lastpage
208
Abstract
Anodic oxidation of silicon in an oxygen plasma is a low temperature alternative to thermal oxidation. This report describes low-temperature oxide layers on silicon with MOS properties similar to those obtained by conventional high temperature oxidation. Oxides are grown in a 2.45 GHz microwave plasma disk reactor.
Keywords
Inductors; Oxidation; Plasma properties; Plasma temperature; Predictive models; Semiconductor films; Silicon; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191150
Filename
1486408
Link To Document