High voltage complementary gated MOS thyristors

A new lateral thyristor, the COGMOS (Complementary Gated MOS) thyristor was developed for analog digital compatible power IC´s. It is a BiMOS composite device in which six elements, such as pnp and npn transistors, p and n channel MOSFET´s and two diodes, are merged. The fabricated COGMOS thyristor has a high bidirectional blocking voltage (≥ ± 350V), low triggering MOS gate voltage (∼5V) and high MOS gate isolation voltage (>500V). It can be driven under a floating bias condition by a constant low supply voltage and can be isolated electrically from an input circuit, as same as relays transformers and photocoupled semiconductor devices.