Title :
Advanced 1200v HVIC technology
Author :
Chang, M.F. ; Pifer, G.C. ; Yilmaz, H. ; Wildi, E.J. ; Hodgins, R.G. ; Owyang, K. ; Adler, M.S. ; Cornell, M.
Author_Institution :
General Electric Company, Research Triangle Park, North Carolina
Abstract :
1200 volt blocking capability of lateral high voltage devices has been achieved through theoretical and experimental investigation. Feasibility of the 1200 volt lateral npn bipolar junction transistor, np diode and for the first time lateral DMOSFET has been demonstrated. On-resistance of the 1200 volt DMOSFET is four times less than that of the 1200 volt npn BJT. The major contribution to high BJT on-resistance comes from the series JFET pinch resistors.
Keywords :
Anodes; CMOS process; Circuit testing; Conductivity; Isolation technology; Logic devices; Low voltage; MOSFET circuits; Semiconductor diodes; Silicon;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191156
