• DocumentCode
    3556736
  • Title

    High-temperature stable W5Si3/In0.53Ga0.47As ohmic contacts to GaAs for self-aligned HBTs

  • Author

    Ishii, K. ; Ohshima, T. ; Futatsugi, T. ; Fujii, T. ; Yokoyama, N. ; Shibatomi, A.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    Metallurgicalp and electrical stabilities of W5Si3/In0.53Ga0.47As ohmic contacts to n-GaAs are studied using backscattering and TLM measurements. It is found that W5Si3/In0.53Ga0.47As ohmic contacts are stable even after annealing at 900°C for 5 sec. We propose and demonstrate a self-aligned HBT fabrication process using the high-temperature stable ohmic contacts for emitter-electrodes.
  • Keywords
    Annealing; Chromium; Conductivity; Electrical resistance measurement; Electrodes; Gallium arsenide; Gold; Morphology; Ohmic contacts; Sputter etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191168
  • Filename
    1486426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556736