DocumentCode :
3556745
Title :
Characterization of IC devices fabricated in low temperature (550 ° c) epitaxy by UHV/CVD technique
Author :
Nguyen, T.N. ; Harame, D.L. ; Stork, J.M.C. ; LeGoues, F.K. ; Meyerson, B.S.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
fYear :
1986
fDate :
7-10 Dec. 1986
Firstpage :
304
Lastpage :
307
Abstract :
Sub-micron insitu doped silicon epitaxial films have been successfully grown at temperatures as low as 550°C by a novel UHV/CVD process. Extensive electrical characterization of test devices fabricated in these films using low temperature (≤ 880°C) processing indicated that the epilayers were of high quality. The n+-p junctions exhibit ideal characteristics with ideality of 1.0, and reverse bias leakage current density of < 2.5 fA µm-2at 5 Volts. Carrier lifetime measurement from MOS capacitors was as high as 160 µsecs. C-V and oxide breakdown data further confirmed the suitability of these layers for VLSI devices.
Keywords :
Capacitance-voltage characteristics; Charge carrier lifetime; Electric breakdown; Epitaxial growth; Leakage current; MOS capacitors; Semiconductor films; Silicon; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Conference_Location :
Los Angeles, CA, USA
Type :
conf
DOI :
10.1109/IEDM.1986.191176
Filename :
1486434
Link To Document :
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