Title :
LECR RIBE for submicron patterning
Author :
Nishioka, K. ; Yoneda, M. ; Morimoto, H. ; Uoya, S.
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
Abstract :
A newly developed Reactive Ion Beam Etching (RIBE) using a gridless and DC bias- Local Electron Cyclotron Resonance (LECR) plasma system can improve the etching characteristics by applying negative DC bias voltage and a cusp field. A maskless or resistless process can be also achieved by LECR RIBE with an excimer laser or FIB technology.
Keywords :
Coils; Current density; Etching; Ion beams; Magnetic fields; Plasma applications; Plasma density; Plasma sources; Pump lasers; Voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191177
