DocumentCode
3556746
Title
LECR RIBE for submicron patterning
Author
Nishioka, K. ; Yoneda, M. ; Morimoto, H. ; Uoya, S.
Author_Institution
Mitsubishi Electric Corporation, Itami, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
308
Lastpage
311
Abstract
A newly developed Reactive Ion Beam Etching (RIBE) using a gridless and DC bias- Local Electron Cyclotron Resonance (LECR) plasma system can improve the etching characteristics by applying negative DC bias voltage and a cusp field. A maskless or resistless process can be also achieved by LECR RIBE with an excimer laser or FIB technology.
Keywords
Coils; Current density; Etching; Ion beams; Magnetic fields; Plasma applications; Plasma density; Plasma sources; Pump lasers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191177
Filename
1486435
Link To Document