DocumentCode
3556759
Title
Quantum efficiency model for the CCD flash gate
Author
Janesick, J. ; Campbell, Dave
Author_Institution
Jet Propulsion Laboratory, Pasadena, California
Volume
32
fYear
1986
fDate
1986
Firstpage
350
Lastpage
352
Abstract
A model is presented that predicts the quantum efficiency performance for the backside-illuminated CCD accumulated with a flash gate. Predicted values from this model are compared to experimental measurements taken from a flash gated CCD. We discuss critical CCD parameters used in the model that be controlled to achieve optimum response over a wide spectral range.
Keywords
Capacitance; Charge coupled devices; Electric potential; Electron mobility; Equations; Interface states; Permittivity; Platinum; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191189
Filename
1486447
Link To Document