The application of OMCVD to high performance two-dimensional electron gas structures

Recent advances in organometallic chemical vapor deposition (OMCVD) have made it an attractive alternative to molecular beam epitaxy (MBE) for the growth of device quality, multilayer, ultrathin structures requiring abrupt interfaces. The motivation for this development has been the potential for large area deposition, the excellent surface morphology obtainable, the wide range of growth rates possible and the wide variety of compounds that can be grown. In this paper we discuss our demonstration of reproducible growth by OMCVD of high quality GaAs/AlGaAs heterostructures for obtaining a 2-dimensional electron gas. We then present our results for modulation doped field effect transistors (MODFETs), inverted MODFETs, negative resistance field effect transistors (NERFETs), charge injection transistors (CHINTs) and a novel memory cell in all of which a 2-dimensional electron gas channel is utilized. We show that OMCVD has made possible the demonstration of devices which either were unachievable or possessed inferior characteristics when MBE material was used.