DocumentCode :
3556792
Title :
Power and noise performance of the pseudomorphic modulation doped field effect transistor at 60 GHz
Author :
Henderson, T. ; Aksun, M.I. ; Peng, C.K. ; Morkoc, H. ; Chao, P.C. ; Smith, P.M. ; Duh, K.H.G. ; Lester, L.F.
Author_Institution :
University of Illinois, Urbana, IL
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
464
Lastpage :
466
Abstract :
Quarter micron gate length In0.15Ga0.85As/Al0.15Ga0.55As pseudomorphic modulation doped field effect transistors (MODFETs) were grown, fabricated, and characterized. These devices exhibit outstanding DC performance with excellent pinch-off characteristics, a relatively low output conductance for a quarter micron gate field effect transistor (FET), a high reverse breakdown voltage, and transconductances as high as 495 mS/mm at 300K. Furthermore, these devices show outstanding rf performance as well. At 18 GHz, a noise figure of 0.9 dB with an associated gain of 10.4 dB was observed, and at 62 GHz, the noise figure was 2.4 dB with an associated gain of 4.4 dB. Power measurements at 62.2 GHz indicate a maximum output power density of 0.43 W/mm (Vds= 6 V) with a power gain of 3 dB, and a maximum power added efficiency of 28%, an unprecedented value. When tuned a maximum available gain of 11.7 dB was obtained at 60 GHz implying a maximum frequency of oscillation near 250 GHz. From these results it is clear that the pseudomorphic MODFET represents a very attractive choice for operation near or above 60 GHz.
Keywords :
Carrier confinement; Epitaxial layers; FETs; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Noise figure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191220
Filename :
1486478
Link To Document :
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