Title :
Technology improvement for high speed ECL RAMs
Author :
Ogiue, Katsumi ; Odaka, Masanori ; Iwabuchi, Masato ; Uchida, Akihisa
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The trends in high speed ECL random access memories (RAMs) are reviewed with emphasis on memory cell improvements for achieving high speed performance. State-of-the-art technologies including bipolar, BICMOS, memory-with-logic modules and logic-in-memory LSIs are discussed. Finally, some prospects for ultra-high speed RAMs are proposed.
Keywords :
BiCMOS integrated circuits; Capacitors; High performance computing; Large scale integration; Power dissipation; Production; Random access memory; Read-write memory; System performance; Technological innovation;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191222
