• DocumentCode
    3556797
  • Title

    Ultrahigh-speed GaAs static frequency dividers

  • Author

    Jensen, J.F. ; Salmon, L.G. ; Deakin, D.S. ; Delaney, M.J.

  • Author_Institution
    Hughes Research Laboratories, Malibu, California
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    476
  • Lastpage
    479
  • Abstract
    This paper describe the design, fabrication, and testing of high-speed GaAs static divider circuits that operate up to 17.9 GHz at room temperature. The dividers were implemented in both buffered FET logic (BFL) and capacitively enhanced logic (CEL), and were fabricated with 0.2 µm gate length MESFETs, active channels grown with molecular beam epitaxy (MBE), and airbridge interconnects.
  • Keywords
    Circuit testing; FETs; Fabrication; Frequency conversion; Gallium arsenide; Integrated circuit interconnections; Logic; MESFETs; Molecular beam epitaxial growth; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191224
  • Filename
    1486482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556797