DocumentCode :
3556800
Title :
Concept and basic technologies for 3-D IC structure
Author :
Akasaka, Yoichi ; Nishimura, Tadashi
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
488
Lastpage :
491
Abstract :
VLSI will be rearching to limit of minimization in 1990´s, and after that, further increase of packing density or a number of transistors in a chip might depend on the vetical integration (3-D IC) technology. The 3-D IC consisting of completely stacked active layers offers the flexibility of the circuit design and ccmposition of various devices. This will lead upto new system design and novel functional device. It will become a big trend for VLSI in the next generation.
Keywords :
Crystallization; Electron beams; Image sensors; Intelligent sensors; Organic materials; Random access memory; Signal processing; Sputter etching; Temperature; Three-dimensional integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191227
Filename :
1486485
Link To Document :
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