Title :
Modeling dopant redistribution in SiO2/WSi2/Si structure
Author :
Shone, F.C. ; Hansen, S.E. ; Kao, D.B. ; Saraswat, K.C. ; Plummer, J.D.
Author_Institution :
Stanford University
Abstract :
In this paper, arsenic and boron redistributions in the SiO2/WSi2/Si structure are well characterized and successfully modeled. The solubility of arsenic in WSi2at different temperatures plays an important role in determining how As redistributes. Arsenic pile-up at the SiO2/WSi2interface and segregation at the WSi2/Si interface are also investigated. The fast segregation and growth of the precipitate of boron atoms at the SiO2/WSi2interface are the key factors in modeling boron redistribution. A novel method is introduced to simulate dopant growth at the interfaces and is implemented in the SUPREM III program.
Keywords :
Annealing; Boron; Contact resistance; Grain boundaries; Integrated circuit modeling; Laboratories; Semiconductor process modeling; Silicides; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191241
