DocumentCode
3556828
Title
Self-consistent calculation of electron states in narrow channels
Author
Laux, Steven E. ; Warren, Alan C.
Author_Institution
IBM T.J. Watson Research Center, Yorktown Heights, NY
Volume
32
fYear
1986
fDate
1986
Firstpage
567
Lastpage
570
Abstract
Two-dimensional self-consistent numerical solutions to the Poisson and Schrödinger equations have been obtained for electron states in narrow gate-induced channels. The formulation of and numerical methods employed in this calculation will be described. Electron states calculated for the metal-oxide-silicon grating-gate field-effect transistor(l) will be described and compared to electron energy level spacings inferred from the recent channel conductance data of Warren, et al.(2).
Keywords
Effective mass; Electrons; Electrostatics; Energy states; FETs; Gratings; Poisson equations; Potential well; Schrodinger equation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191252
Filename
1486510
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