Self-consistent calculation of electron states in narrow channels

Two-dimensional self-consistent numerical solutions to the Poisson and Schrödinger equations have been obtained for electron states in narrow gate-induced channels. The formulation of and numerical methods employed in this calculation will be described. Electron states calculated for the metal-oxide-silicon grating-gate field-effect transistor(l) will be described and compared to electron energy level spacings inferred from the recent channel conductance data of Warren, et al.(2).