Title :
A high-performance CMOS technology for very fast static RAMs
Author :
Chan, H. ; Yao, C.C. ; Tzou, J.J. ; Cheung, R. ; Amundson, M. ; Rizzuto, J. ; Shen, A. ; Dave, K. ; Chen, H. ; Ho, B. ; Cohen, B. ; Vuignier, K. ; Anvick, S. ; Isakari, M. ; Rodriquez, N. ; Chen, C.
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA
Abstract :
An advanced twin-tub, double-polysilicon, dual-metal CMOS technology with 1 µm channel transistors is developed. This technology has been used to produce a high-performance 22 ns 256K (32K × 8) static RAM. In addition to aggressive scaling, the process has been designed with emphasis on device reliability and production-worthiness to warrant high manufacturing yield. The scalability of the present technology for SRAMs of next generation is also discussed.
Keywords :
CMOS technology; Integrated circuit interconnections; Isolation technology; Leakage current; MOSFET circuits; Oxidation; Resistors; Space technology; Substrates; Transistors;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191261
