DocumentCode
3556844
Title
Monolithic two-dimensional GaInAsP/InP laser arrays
Author
Liau, Z.L. ; Walpole, J.N.
Author_Institution
Massachusetts Institute of Technology, Lexington, Massachusetts
Volume
32
fYear
1986
fDate
1986
Firstpage
622
Lastpage
625
Abstract
Monolithic two-dimensional diode-laser arrays operating cw at room temperature with high output powers are described. The arrays consist of GaInAsP/InP buried-heterostructure lasers with a recently developed surface-emitting configuration in which an integrated 45° mirror is used to deflect the laser output to a direction perpendicular to the substrate surface. These surface-emitting lasers show for the first time a performance level comparable to good conventional cleaved-mirror edge-emitting devices and are attractive for very high power arrays and for integrated optoelectronics.
Keywords
Diodes; Indium phosphide; Integrated optoelectronics; Mirrors; Optical arrays; Power generation; Power lasers; Semiconductor laser arrays; Surface emitting lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191267
Filename
1486525
Link To Document