Monolithic two-dimensional GaInAsP/InP laser arrays

Monolithic two-dimensional diode-laser arrays operating cw at room temperature with high output powers are described. The arrays consist of GaInAsP/InP buried-heterostructure lasers with a recently developed surface-emitting configuration in which an integrated 45° mirror is used to deflect the laser output to a direction perpendicular to the substrate surface. These surface-emitting lasers show for the first time a performance level comparable to good conventional cleaved-mirror edge-emitting devices and are attractive for very high power arrays and for integrated optoelectronics.