Title :
Deep-trench power MOSFET with an Ron Area product of 160 m Ω .mm2
Author :
Ueda, D. ; Takagi, H. ; Kano, G.
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Abstract :
In this paper, is demonstrated the power MOSFET having an Ron Area product of 160 mΩ.mm2(Ron=11 mΩ : BVdss=15 V, Chip area= 3.8 mm × 3.8 mm) which is approximately one third of the lowest value ever reported. A newly developed deep-trench structure has contributed to such the drastic reduction of the product.
Keywords :
Conductivity; Electrons; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Product design; Rectifiers; Relays; Voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/IEDM.1986.191272
