• DocumentCode
    3556857
  • Title

    Dynamic stressing of thin oxides

  • Author

    Fong, Y. ; Chen, I.C. ; Holland, S. ; Lee, J. ; Hu, C.

  • Author_Institution
    University of California, Berkeley, Berkeley, CA
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    664
  • Lastpage
    667
  • Abstract
    The breakdown of thin oxides due to DC stressing and uni-polarity and bi-polarity dynamic stressing has been compared. For dynamic stressing, the total integrated charge-to-breakdown, QBD, and the total stressed time-to-breakdown, tBD, depend on both the pulse width and duty cycle of the stressing voltage. Uni-polarity and bipolarity stressing produce similar results. In all cases, both QBDand tBDof dynamic stressing are greater than those of DC stressing. For 0.1 ms pulses, QBDand tBDare about four times larger than what DC stressing would predict. The main reason for the higher QBDand tBDunder dynamic stressing is reduced hole trapping at localized weak oxide areas. A transient hole generation and relaxation model is proposed to quantitatively explain the increase in QBDfor dynamic stressing.
  • Keywords
    Breakdown voltage; Capacitors; Charge carrier processes; Circuit testing; Design for quality; Electric breakdown; Electron traps; Life estimation; Life testing; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191279
  • Filename
    1486537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556857