Electrical properties of thin Ta2O5films grown by chemical vapor deposition

This paper describes the growth and electrical properties of tantalum pentoxide (Ta2O5) film (15-100nm) prepared by using a chemical vapor deposition (CVD) method from Ta-organic source compound, and also the TiO2-doping effect on the dc conduction property of the thin-film capacitor. Highly reliable films as thin as 15nm were obtained by examining the critical CVD parameters such as the growth temperature and the gas flow conditions. The dc leakage of Al/Ta2O5/Si MIS capacitors was remarkably reduced by the dilute TiO2doping as low enough for the use of a planer storage capacitor in the future DRAM devices.