DocumentCode :
3556862
Title :
Oxidized Ta2O5/Si3N4dielectric films for ultimate-STC dRAMs
Author :
Shinriki, Hiroshi ; Nishioka, Yasushiro ; Ohji, Yuzuru ; Mukai, Kiichiro
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
684
Lastpage :
687
Abstract :
A new dielectric film technology characterized by a novel multilayer structure (Ta2O5/SiO2/Si3N4) on poly-silicon is developed to realize high-density dRAMs. The SiO2interface is grown by dry oxidation of the Ta2O5/Si3N4layers at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/µm2, which is equivalent to 6.0 to 6.5nm thick SiO2. The leakage current at an effective electric field of 5MV/cm is less than 10-9A/cm2, and the extrapolated time to failure (TDDB) is longer than 1000 years.
Keywords :
Annealing; Capacitors; Dielectric films; Fabrication; Leakage current; Oxidation; Semiconductor films; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191284
Filename :
1486542
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556862
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