Title :
Investigation and reduction of hot electron induced punchthrough (HEIP) effect in submicron PMOSFETs
Author :
Koyanagi, M. ; Lewis, A.G. ; Zhu, J. ; Martin, R.A. ; Huang, T.Y. ; Chen, J.Y.
Author_Institution :
Xerox, Palo Alto Research Center, Palo Alto, CA
Abstract :
Hot carrier reliability in submicron PMOSFETs has been investigated. The punchthrough voltage is seriously reduced due to Hot Electron Induced Punch-through (HEIP) in submicron PMOSFETs. In order to mitigate the HEIP effect, an LDD PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0.8 µm at the worst case supply voltage (5.5v).
Keywords :
CMOS technology; Degradation; Hot carriers; Impact ionization; Integrated circuit reliability; Laboratories; MOSFETs; Stress; Substrate hot electron injection; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191295
