Title :
GaAs-MESFETs fabricated in SOI layers on crystalline CaxSr1-xF2insulator films
Author :
Tsutsui, K. ; Asano, T. ; Ishiwara, H. ; Furukawa, S. ; Furukawa, S.
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
SOI-GaAs structures of GaAs/CaxSr1-xF2/GaAs
Keywords :
Crystallization; Degradation; Dielectrics and electrical insulation; FETs; Gallium arsenide; High speed integrated circuits; Molecular beam epitaxial growth; Substrates; Temperature; Very high speed integrated circuits;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191304
