• DocumentCode
    3556884
  • Title

    GaAs-MESFETs fabricated in SOI layers on crystalline CaxSr1-xF2insulator films

  • Author

    Tsutsui, K. ; Asano, T. ; Ishiwara, H. ; Furukawa, S. ; Furukawa, S.

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    755
  • Lastpage
    758
  • Abstract
    SOI-GaAs structures of GaAs/CaxSr1-xF2/GaAs
  • Keywords
    Crystallization; Degradation; Dielectrics and electrical insulation; FETs; Gallium arsenide; High speed integrated circuits; Molecular beam epitaxial growth; Substrates; Temperature; Very high speed integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191304
  • Filename
    1486562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556884