• DocumentCode
    3556885
  • Title

    A 760mS/mm N+self-aligned enhancement mode doped-channel MIS-like FET (DMT)

  • Author

    Hida, H. ; Suzuki, Y. ; Katano, F. ; Toyoshima, H. ; Okamoto, A. ; Kumashiro, S. ; Toyoshima, Hisashi ; Okamoto, Atsushi ; Kumashiro, S.

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    759
  • Lastpage
    762
  • Abstract
    N+ self-aligned gate Doped-channel MIS-like FETs(DMTs) have, for the first time, successfully been developed, assisted by utilizing rapid thermal annealing technology. They have definitely operated in an enhancement mode with extremely marked performances. Sheet resistance for ion implanted N+region outside a gate electrode and parasitic source resistance for anealing without any encapsulants are as small as 180Ω/□ and 0.36Ωmm, respectively. Maximum transconductance and K-value for 0.3
  • Keywords
    Electrodes; Electrons; Equations; FETs; Gallium arsenide; National electric code; OFDM modulation; Semiconductor devices; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191305
  • Filename
    1486563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556885