Title :
A 760mS/mm N+self-aligned enhancement mode doped-channel MIS-like FET (DMT)
Author :
Hida, H. ; Suzuki, Y. ; Katano, F. ; Toyoshima, H. ; Okamoto, A. ; Kumashiro, S. ; Toyoshima, Hisashi ; Okamoto, Atsushi ; Kumashiro, S.
Author_Institution :
NEC Corporation, Kawasaki, Japan
Abstract :
N+ self-aligned gate Doped-channel MIS-like FETs(DMTs) have, for the first time, successfully been developed, assisted by utilizing rapid thermal annealing technology. They have definitely operated in an enhancement mode with extremely marked performances. Sheet resistance for ion implanted N+region outside a gate electrode and parasitic source resistance for anealing without any encapsulants are as small as 180Ω/□ and 0.36Ωmm, respectively. Maximum transconductance and K-value for 0.3
Keywords :
Electrodes; Electrons; Equations; FETs; Gallium arsenide; National electric code; OFDM modulation; Semiconductor devices; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191305
