Title :
Self-aligned AlGaAs/GaAs heterojunction bipolar transistors for high-speed digital circuits
Author :
Ishibashi, T. ; Yamauchi, Y. ; Nakajima, O. ; Nagata, K. ; Ito, H.
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
Keywords :
Capacitance; Digital circuits; Fabrication; Flip-flops; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Propagation delay; Ring oscillators;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191320
