DocumentCode :
3556904
Title :
A new heterostructure FET
Author :
Taylor, G.W. ; Lebby, M.S. ; Chang, T.Y. ; Gnall, R.N. ; Sauer, N. ; Tell, B. ; Tennant, D.M. ; Simmons, Jay G.
Author_Institution :
AT&T Bell Laboratories, Holmdel, New Jersey
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
817
Lastpage :
821
Keywords :
FETs; Gallium arsenide; HEMTs; Heterojunctions; Ion implantation; MODFETs; MOSFET circuits; Ohmic contacts; Threshold voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191323
Filename :
1486581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556904
