DocumentCode

3556904

Title

A new heterostructure FET

Author

Taylor, G.W. ; Lebby, M.S. ; Chang, T.Y. ; Gnall, R.N. ; Sauer, N. ; Tell, B. ; Tennant, D.M. ; Simmons, Jay G.

Author_Institution

AT&T Bell Laboratories, Holmdel, New Jersey

Volume

32

fYear

1986

fDate

1986

Firstpage

817

Lastpage

821

Keywords

FETs; Gallium arsenide; HEMTs; Heterojunctions; Ion implantation; MODFETs; MOSFET circuits; Ohmic contacts; Threshold voltage; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1986 International

Type

conf

DOI

10.1109/IEDM.1986.191323

Filename

1486581