• DocumentCode
    3556908
  • Title

    MBE Grown GaAs MESFETs with ultra-high gmand fT

  • Author

    Mishra, U.K. ; Beaubien, R.S. ; Delaney, M.J. ; Brown, A.S. ; Hackett, L.H.

  • Author_Institution
    Hughes Research Laboratories, Malibu, California
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    829
  • Lastpage
    831
  • Keywords
    Buffer layers; Doping; Epitaxial layers; Fabrication; Gallium arsenide; Laboratories; MESFETs; Molecular beam epitaxial growth; Testing; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191327
  • Filename
    1486585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556908