Title :
MBE Grown GaAs MESFETs with ultra-high gmand fT
Author :
Mishra, U.K. ; Beaubien, R.S. ; Delaney, M.J. ; Brown, A.S. ; Hackett, L.H.
Author_Institution :
Hughes Research Laboratories, Malibu, California
Keywords :
Buffer layers; Doping; Epitaxial layers; Fabrication; Gallium arsenide; Laboratories; MESFETs; Molecular beam epitaxial growth; Testing; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191327
