Title :
A high speed super self-aligned bipolar-CMOS technology
Author :
Chiu, Tzu-Yin ; Chin, Gen M. ; Lau, Maureen Y. ; Hanson, Ronald C. ; Morris, Mark D. ; Lee, Kwing F. ; Voshchenkov, Alexander M. ; Swartz, Robert G. ; Archer, Vance D. ; Finegan, Sean N.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
Abstract :
An ideal device structure for integrating bipolar and CMOS is reported in this paper. Both the vertical npn and MOS devices have new non-overlapping super self-aligned structures. With a single 5V supply, averaged per stage delay of 82ps and 125ps have been measured for 0.6µm and 0.85µm (Leff) CMOS ring oscillators. Bipolar transistors have also been fabricated with a nominal current gain of 100.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Delay; Implants; MOS devices; Merging; Ring oscillators; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191338
