• DocumentCode
    3556980
  • Title

    Quasi-static simulation of hot-electron-induced MOSFET degradation under AC (pulse) stress

  • Author

    Kuo, M.M. ; Seki, K. ; Lee, P.M. ; Choi, J.Y. ; Ko, P.K. ; Hu, C.

  • Author_Institution
    University of California, Berkeley
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current and Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post- processors fashion to form an independent simulator. The pre-processor interprets the input deck, and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes lifetime prediction.
  • Keywords
    Circuit simulation; Computational modeling; Degradation; Laboratories; Life estimation; MOSFET circuits; Monitoring; SPICE; Stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191344
  • Filename
    1487302