DocumentCode :
3556980
Title :
Quasi-static simulation of hot-electron-induced MOSFET degradation under AC (pulse) stress
Author :
Kuo, M.M. ; Seki, K. ; Lee, P.M. ; Choi, J.Y. ; Ko, P.K. ; Hu, C.
Author_Institution :
University of California, Berkeley
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
47
Lastpage :
50
Abstract :
A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current and Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post- processors fashion to form an independent simulator. The pre-processor interprets the input deck, and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes lifetime prediction.
Keywords :
Circuit simulation; Computational modeling; Degradation; Laboratories; Life estimation; MOSFET circuits; Monitoring; SPICE; Stress; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191344
Filename :
1487302
Link To Document :
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