Title :
Device physics of quantum-well heterostructure MI3SFET´s
Author :
Kiehl, R.A. ; Frank, D.J. ; Wright, S.L. ; Magerlein, J.H.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, New York
Abstract :
A quantum-well heterostructure FET that is undoped except for a thin layer beneath the well and is fabricated in an ion-implanted self-aligned geometry is examined in experiments and computer simulations. Key aspects of the physics of this device, which relate to channel access, charge control, and deep-level trapping, are described.
Keywords :
Circuits; FETs; Gate leakage; Geometry; HEMTs; MODFETs; Physics; Quantum computing; Quantum well devices; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191351
