• DocumentCode
    3556987
  • Title

    Device physics of quantum-well heterostructure MI3SFET´s

  • Author

    Kiehl, R.A. ; Frank, D.J. ; Wright, S.L. ; Magerlein, J.H.

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, New York
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    70
  • Lastpage
    73
  • Abstract
    A quantum-well heterostructure FET that is undoped except for a thin layer beneath the well and is fabricated in an ion-implanted self-aligned geometry is examined in experiments and computer simulations. Key aspects of the physics of this device, which relate to channel access, charge control, and deep-level trapping, are described.
  • Keywords
    Circuits; FETs; Gate leakage; Geometry; HEMTs; MODFETs; Physics; Quantum computing; Quantum well devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191351
  • Filename
    1487309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556987