DocumentCode
3556989
Title
A new two-dimensional electron gas base transistor (2DEG-HBT)
Author
Usagawa, Toshiyuki ; Goto, Shigeo ; Mishima, Tomoyoshi ; Yamane, Masao ; Kobayashi, Masayoshi ; Kawata, Masahiko ; Takahashi, Susumu
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
78
Lastpage
81
Abstract
A new two-dimensional electron gas (2DEG) base pnp-type AlGaAs/GaAs heterobipolar transistor (2DEG-HBT) has been proposed and fabricated for the first time. This is the first monolithic fabrication of HBT and 2DEG-FET. 2DEG-HBT is a new functional device, a ´bitransistor´, operating as both Bipolar and FET. This bitransistor action is achieved by a new device operation principle:the 2DEG at the AlGaAs/GaAs heterointerface acts as either base for Bipolar or n-channel for FET. 2DEG-HBT will open a new field of high speed and low power-oriented BiCMOS-like GaAs LSIs.
Keywords
Bipolar transistors; Cutoff frequency; Electrons; FETs; Fabrication; Gallium arsenide; Gas lasers; Heterojunction bipolar transistors; Laboratories; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191353
Filename
1487311
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