Title :
A new two-dimensional electron gas base transistor (2DEG-HBT)
Author :
Usagawa, Toshiyuki ; Goto, Shigeo ; Mishima, Tomoyoshi ; Yamane, Masao ; Kobayashi, Masayoshi ; Kawata, Masahiko ; Takahashi, Susumu
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Abstract :
A new two-dimensional electron gas (2DEG) base pnp-type AlGaAs/GaAs heterobipolar transistor (2DEG-HBT) has been proposed and fabricated for the first time. This is the first monolithic fabrication of HBT and 2DEG-FET. 2DEG-HBT is a new functional device, a ´bitransistor´, operating as both Bipolar and FET. This bitransistor action is achieved by a new device operation principle:the 2DEG at the AlGaAs/GaAs heterointerface acts as either base for Bipolar or n-channel for FET. 2DEG-HBT will open a new field of high speed and low power-oriented BiCMOS-like GaAs LSIs.
Keywords :
Bipolar transistors; Cutoff frequency; Electrons; FETs; Fabrication; Gallium arsenide; Gas lasers; Heterojunction bipolar transistors; Laboratories; Semiconductor lasers;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191353
