DocumentCode
3556992
Title
GaAs-on-silicon integrated circuits; Savior for GaAs ? or for Si ?
Author
Shichijo, H. ; Matyi, R.J.
Author_Institution
Texas Instruments Incorporated, Dallas, TX
Volume
33
fYear
1987
fDate
1987
Firstpage
88
Lastpage
91
Abstract
"GaAs-on-Si" refers to thin epitaxial layers of GaAs grown on silicon substrates. This paper will review some of the recent progress in materials growth and in device and circuit developments using such materials, and will attempt to evaluate the impact of this emerging technology on existing GaAs and Si IC technologies.
Keywords
Atomic layer deposition; Circuits; Gallium arsenide; Lattices; MOCVD; Molecular beam epitaxial growth; Optical materials; Silicon; Substrates; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191356
Filename
1487314
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