Title :
GaAs-on-silicon integrated circuits; Savior for GaAs ? or for Si ?
Author :
Shichijo, H. ; Matyi, R.J.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
Abstract :
"GaAs-on-Si" refers to thin epitaxial layers of GaAs grown on silicon substrates. This paper will review some of the recent progress in materials growth and in device and circuit developments using such materials, and will attempt to evaluate the impact of this emerging technology on existing GaAs and Si IC technologies.
Keywords :
Atomic layer deposition; Circuits; Gallium arsenide; Lattices; MOCVD; Molecular beam epitaxial growth; Optical materials; Silicon; Substrates; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191356
