DocumentCode
3557002
Title
A 1.4 million element, full frame CCD image sensor with vertical overflow drain for anti-blooming and low color crosstalk
Author
Nichols, D.N. ; Chang, W.C. ; Burkey, B.C. ; Stevens, E.G. ; Trabka, E.A. ; Losee, D.L. ; Tredwell, T.J. ; Stancampiano, C.V. ; Kelly, T.M. ; Khosla, R.P. ; Lee, T.H.
Author_Institution
Eastman Kodak Company, Rochester, New York
Volume
33
fYear
1987
fDate
1987
Firstpage
120
Lastpage
123
Abstract
Blooming and color crosstalk must be greatly suppressed in solid-state image sensors for nearly all imaging applications. A vertical overflow drain has been developed for a 1.4 megapixel image sensor for blooming suppression and low color crosstalk. The overflow drain is formed using a uniform flat p-well. This paper describes the modeling, fabrication, and experimental data associated with implementing vertical overflow in this device.
Keywords
Charge coupled devices; Charge-coupled image sensors; Clocks; Crosstalk; Filling; Image sensors; Image storage; Semiconductor process modeling; Silicon; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191365
Filename
1487323
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